METHOD FOR FABRICATING BLACK SILICON BY USING PLASMA IMMERSION ION IMPLANTATION
摘要
A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
申请公布号
WO2011147115(A1)
申请公布日期
2011.12.01
申请号
WO2010CN75454
申请日期
2010.07.26
申请人
THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES;XIA, YANG;LIU, BANGWU;LI, CHAOBO;LIU, JIE;WANG, MINGGANG;LI, YONGTAO