| 摘要 |
A relief-address control unit of a semiconductor memory device includes a fuse storage unit and a relief circuit. The fuse storage unit includes a plurality of fuse elements that are made nonconductive by irradiation with a laser beam, and a protective film with an opening directly above the fuse elements to facilitate the laser beam to pass through. The relief circuit specifies a relieved address based on a nonconductive state of the fuse elements. The opening is in a unified form along a long-side direction of the fuse storage unit. Further, the relief circuit is arranged adjacent to a short-side end of the fuse storage unit. |
