| 摘要 |
<p>A light emitting diode (2) with thermoradiation heat-dissipation layers is provided, which includes a sapphire substrate (50), a first thermoradiation heat-dissipation layer (61), a second thermoradiation heat-dissipation layer (63), an epitaxial light-emitting structure (70), a first metal contact layer (81) and a second metal contact layer (83). The thermoradiation heat-dissipation layers (61, 63) improve heat radiation efficiency.</p> |
