SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the cost of manufacturing a semiconductor device using a silicon carbide substrate, and for that purpose, to provide a silicon carbide substrate manufacturing method, a semiconductor device manufacturing method, a silicon carbide substrate, and a semiconductor device which meet the objective.

SOLUTION: A method for manufacturing a silicon carbide substrate 1 comprises: a step for preparing a base substrate 10 composed of silicon carbide and a SiC substrate 20 composed of monocrystalline silicon carbide; a step for fabricating a multilayer substrate by disposing the SiC substrate 20 on a principal plane 10A of the base substrate 10 so as to contact therewith; a step for joining the base substrate 10 and the SiC substrate 20 together by heating the multilayer substrate at a higher temperature for the base substrate 10 than for the SiC substrate 20; and a step for forming an epitaxial growth layer 30 on a principal plane 10B, or a side opposite to the SiC substrate 20, of the base substrate 10 which has had the SiC substrate 20 jointed thereto.

COPYRIGHT: (C)2012,JPO&INPIT