| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the generation of an abnormal electrical discharge and dusts by reducing the reattachment to a target and also control a decline in a film formation rate. <P>SOLUTION: In a sputtering method, a sputtering gas containing a noble gas is introduced from two or more points into a vacuum chamber 1, a molecular weight of the sputtering gas introduced from around the target 2 is controlled to be larger than those of any sputtering gasses introduced from around a substrate 51, and also an introduction gas plasma source 13 is provided around the target 2 to convert the sputtering gas into plasma. With the configuration, the sputtering gas having high molecular weight is preferentially ionized, thereby improving the sputtering performance. Accordingly, the reattachment to the target 2 is reduced and the decline in the film formation rate is controlled. <P>COPYRIGHT: (C)2012,JPO&INPIT |
