| 发明名称 |
Ozone gas processing for ferroelectric memory circuits. |
| 摘要 |
<p>A method for forming a ferroelectric capacitor for use in an integrated circuit establishing one layer (12, 14, 16) over another (10, 12, 14) and then annealing the structure, using an oxygen or ozone anneal, after each layer is established. In particular, an ozone anneal is used after the establishment of a layer of ferroelectric material (14). <IMAGE></p> |
| 申请公布号 |
EP0557937(A1) |
申请公布日期 |
1993.09.01 |
| 申请号 |
EP19930102788 |
申请日期 |
1993.02.23 |
| 申请人 |
RAMTRON INTERNATIONAL CORPORATION |
发明人 |
PATEL, DIVYESH N.;SHELDON, DOUGLAS |
| 分类号 |
G11C11/22;H01L21/02;H01L21/31;H01L21/314;H01L21/316;H01L21/321;H01L21/324;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C11/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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