发明名称 |
SILICON NITRIDE FILM OF SEMICONDUCTOR ELEMENT, AND METHOD AND APPARATUS FOR PRODUCING SILICON NITRIDE FILM |
摘要 |
<p>Disclosed are: a silicon nitride film of a semiconductor element, which is formed by applying a bias power and appropriately controls hydrogen leaving from the silicon nitride film; and a method and apparatus for producing a silicon nitride film. Specifically disclosed is a silicon nitride film which is formed on a substrate (19) by plasma processing and used in a semiconductor element. If the silicon nitride film is in contact with a film (41) to which supply of hydrogen is required to be shut off, the silicon nitride film is configured of a biased SiN (31) that is formed by applying a bias to the substrate (19) and an unbiased SiN (32) that is formed without applying a bias to the substrate (19) and the unbiased SiN (32) is arranged on the side on which the silicon nitride film is in contact with the film (41).</p> |
申请公布号 |
WO2011148830(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
WO2011JP61363 |
申请日期 |
2011.05.18 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD.;NISHIKAWA SEIJI |
发明人 |
NISHIKAWA SEIJI |
分类号 |
H01L21/318;C23C16/42;C23C16/507;H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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