发明名称 |
PROTECTIVE COATING FOR PLANARIZATION |
摘要 |
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
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申请公布号 |
US2011294294(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113207627 |
申请日期 |
2011.08.11 |
申请人 |
ABATCHEV MIRZAFER;WELLS DAVID;ZHOU BAOSUO;SUBRAMANIAN KRUPAKAR M.;MICRON TECHNOLOGY, INC. |
发明人 |
ABATCHEV MIRZAFER;WELLS DAVID;ZHOU BAOSUO;SUBRAMANIAN KRUPAKAR M. |
分类号 |
H01L21/311;H01L21/306 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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