发明名称 PROTECTIVE COATING FOR PLANARIZATION
摘要 Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
申请公布号 US2011294294(A1) 申请公布日期 2011.12.01
申请号 US201113207627 申请日期 2011.08.11
申请人 ABATCHEV MIRZAFER;WELLS DAVID;ZHOU BAOSUO;SUBRAMANIAN KRUPAKAR M.;MICRON TECHNOLOGY, INC. 发明人 ABATCHEV MIRZAFER;WELLS DAVID;ZHOU BAOSUO;SUBRAMANIAN KRUPAKAR M.
分类号 H01L21/311;H01L21/306 主分类号 H01L21/311
代理机构 代理人
主权项
地址