| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device for which the controllability of operations is improved, and its driving method. <P>SOLUTION: By an embodiment, the nonvolatile storage device including a memory unit MU and a control unit CU is provided. The memory unit includes first wiring WR1, second wiring WR2, and a memory cell MC which is provided on the crossing part of the first wiring and the second wiring and includes a resistance change layer VR where resistance is changed by at least one of a voltage applied and a current energized through the first wiring and the second wiring. The control unit is connected to the first wiring and the second wiring and supplies at least one of the voltage and the current to the resistance change layer. In the set operation of changing the resistance change layer from the first state of having a first resistance value to the second state of having a second resistance value lower than the first resistance value, the control unit increases the upper limit value of the current to be supplied to the first wiring on the basis of the change of the potential of the first wiring when applying a set operation voltage to the first wiring. <P>COPYRIGHT: (C)2012,JPO&INPIT |
