发明名称 |
SILICON DIOXIDE CANTILEVER SUPPORT AND METHOD FOR SILICON ETCHED STRUCTURES |
摘要 |
An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings. |
申请公布号 |
US2011291222(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113208098 |
申请日期 |
2011.08.11 |
申请人 |
MEINEL WALTER B.;LAZAROV KALIN V.;GOODLIN BRIAN E.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MEINEL WALTER B.;LAZAROV KALIN V.;GOODLIN BRIAN E. |
分类号 |
H01L29/66;H01L29/02 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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