发明名称 Depletion-Mode MOSFET Circuit and Applications
摘要 Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) products.
申请公布号 US2011291195(A1) 申请公布日期 2011.12.01
申请号 US20100893570 申请日期 2010.09.29
申请人 LIN WEN T. 发明人 LIN WEN T.
分类号 H01L23/60 主分类号 H01L23/60
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