| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a thin film transistor higher in the reliability of electrical characteristics than a thin film transistor using an amorphous semiconductor film, with a high mass productivity, and also a plasma processing apparatus by which a semiconductor film having crystallinity even in a film formation step, typically, a microcrystalline semiconductor film is formed and favorable film quality is realized. SOLUTION: An exhausting means having first and second turbo molecular pumps connected in series lowers an ultimate lowest pressure within a reaction chamber into an ultrahigh vacuum region. Further, knife edge type metal seal flange reduces a leak amount in the reaction chamber. A microcrystalline semiconductor film and an amorphous semiconductor film are laminated within the same reaction chamber lowered down to the ultra-high vacuum region. Formation of the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film prevents oxidation of the microcrystalline semiconductor film. COPYRIGHT: (C)2010,JPO&INPIT |
