METHOD OF PRODUCING A SEMICONDUCTOR DEVICE BY BONDING SILVER OXIDE OR SILVER ON A SURFACE OF A SEMICONDUCTOR ELEMENT WITH SILVER OXIDE OR SILVER ON A SURFACE OF A LEAD FRAME OR OF A WIRING SUBSTRATE, AT LEAST ONE OF SAID SURFACES BEING PROVIDED WITH SILVER OXIDE

摘要

An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900°C to the semiconductor device and the base.