发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a wireless communication apparatus having excellent high-frequency characteristics. <P>SOLUTION: A semiconductor integrated circuit device for wireless communication includes: a semiconductor chip comprising a low noise amplifier circuit 110, a first pad 103 for an input of the low noise amplifier circuit, a second pad 102 for the ground and a third pad 104; a plurality of leads (201-209) disposed around the semiconductor chip; a first conductive wire connected to the first pad 103; a second conductive wire connected to the second pad 102; and a third conductive wire connected to the third pad 104. The first pad 103 and the second pad 102 are disposed adjacently, and the first pad 103 and the third pad 104 are disposed adjacently. The first pad 103 is disposed between the second pad 102 and the third pad 104, and the first conductive wire is disposed between the second conductive wire and the third conductive wire. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP4828644(B2) 申请公布日期 2011.11.30
申请号 JP20100132777 申请日期 2010.06.10
申请人 发明人
分类号 H04B1/18;H01L21/822;H01L23/12;H01L27/04 主分类号 H04B1/18
代理机构 代理人
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