发明名称 Method for manufacturing memory element
摘要 A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.
申请公布号 US8067316(B2) 申请公布日期 2011.11.29
申请号 US20090485652 申请日期 2009.06.16
申请人 NAGATA TAKAAKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAGATA TAKAAKI
分类号 H01L21/31 主分类号 H01L21/31
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