PURPOSE: A CMOS(Complementary Metal Oxide Silicon) image sensor and operation method thereof are provided to increase a dynamic range by changing the gate power of a transmission transistor. CONSTITUTION: A light sensing device creates a photoelectron during an hour. The light sensing device executes the second creation process of the photoelectron in which is shorter than an hour. A CMOS image sensor detects the photoelectron in which is created in the light sensing device. The gate voltage of a transmission transistor in which is connected to the light sensing device is established different from other process times.
申请公布号
KR20110128019(A)
申请公布日期
2011.11.28
申请号
KR20100047604
申请日期
2010.05.20
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
HAN, GUN HEE;CHANG, EUN SOO;LEE, DONG MYUNG;CHEON, JI MIN