发明名称 CMOS IMAGE SENSOR AND OPERATION METHOD THEREOF
摘要 PURPOSE: A CMOS(Complementary Metal Oxide Silicon) image sensor and operation method thereof are provided to increase a dynamic range by changing the gate power of a transmission transistor. CONSTITUTION: A light sensing device creates a photoelectron during an hour. The light sensing device executes the second creation process of the photoelectron in which is shorter than an hour. A CMOS image sensor detects the photoelectron in which is created in the light sensing device. The gate voltage of a transmission transistor in which is connected to the light sensing device is established different from other process times.
申请公布号 KR20110128019(A) 申请公布日期 2011.11.28
申请号 KR20100047604 申请日期 2010.05.20
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 HAN, GUN HEE;CHANG, EUN SOO;LEE, DONG MYUNG;CHEON, JI MIN
分类号 H04N5/335 主分类号 H04N5/335
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