发明名称 |
METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY |
摘要 |
<p>A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.</p> |
申请公布号 |
SG175205(A1) |
申请公布日期 |
2011.11.28 |
申请号 |
SG20110074655 |
申请日期 |
2010.03.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
QUICK, TIMOTHY, A.;MARSH, EUGENE, P. |
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