发明名称 METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
摘要 <p>A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.</p>
申请公布号 SG175205(A1) 申请公布日期 2011.11.28
申请号 SG20110074655 申请日期 2010.03.24
申请人 MICRON TECHNOLOGY, INC. 发明人 QUICK, TIMOTHY, A.;MARSH, EUGENE, P.
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