| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image pickup element capable of reducing contact resistance and generating less dark current even when a wiring or a contact hole is miniaturized, and its manufacturing method. <P>SOLUTION: In a solid-state image pickup element 1, a wiring 24 and a transfer electrode film 102 are connected via two contact holes. A lower contact hole A is provided with a titanium silicide film 105 at its bottom. An upper contact hole B contains no titanium silicide and is connected to the lower contact hole via a tungsten film 107 serving as an intermediate wiring layer. The upper and lower contact holes A and B do not contain pure titanium. An in-layer lens film 127 above a photodiode 121 in an imaging pixel region is selectively formed above a stack of layers with respect to the lower contact hole A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
