发明名称 |
SYSTEM AND METHOD FOR PROVIDING LOW VOLTAGE HIGH DENSITY MULTI-BIT STORAGE FLASH MEMORY |
摘要 |
A system and method is disclosed for providing a low voltage high density multi-bit storage flash memory. A dual bit memory cell of the invention comprises a substrate having a common source, a first drain and first channel, and a second drain and a second channel. A common control gate is located above the source. A first floating gate and a second floating gate are located on opposite sides of the control gate. Each floating gate is formed with a sharp tip adjacent to the control gate and an upper curved surface that follows a contour of the surface of the control gate. The sharp tips of the floating gates efficiently discharge electrons into the control gate when the memory cell is erased. The curved surfaces increase capacitor coupling between the control gate and the floating gates. |
申请公布号 |
US2011287596(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US201113198507 |
申请日期 |
2011.08.04 |
申请人 |
BU JIANKANG;JACOBSON LEE JAMES;LABONTE ANDRE PAUL;NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BU JIANKANG;JACOBSON LEE JAMES;LABONTE ANDRE PAUL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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