| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device capable of constraining variation in via depth, and to provide a method of manufacturing the same. <P>SOLUTION: The method of manufacturing a semiconductor device comprises the steps of: forming a cap insulation film containing Si and C on a substrate; forming an organic silica film in which a composition ratio of the number of carbon atoms to the number of silicon atoms is high compared to that of the cap insulation film, on the cap insulation film; and forming two or more recesses having different openings on the organic silica film by plasma treatment using mixed gas including inactive gas, gas containing N, carbon fluoride gas, and oxide gas. <P>COPYRIGHT: (C)2012,JPO&INPIT |
