| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 摘要 |
Disclosed is a semiconductor device, wherein the surface of a semiconductor substrate (1) is formed with abrasive grain marks (62), and dopant diffusing regions (3,5) have a section which extends in a direction which forms an angle within the range of -5° to +5° relative to the extension direction of the abrasive grain marks (62). Also disclosed is a method for producing said semiconductor device. |
| 申请公布号 |
WO2011145521(A1) |
申请公布日期 |
2011.11.24 |
| 申请号 |
WO2011JP61051 |
申请日期 |
2011.05.13 |
| 申请人 |
SHARP KABUSHIKI KAISHA;FUJITA, KENJI;FUNAKOSHI, YASUSHI;OKA, HIROYUKI;OKAMOTO, SATOSHI |
发明人 |
FUJITA, KENJI;FUNAKOSHI, YASUSHI;OKA, HIROYUKI;OKAMOTO, SATOSHI |
| 分类号 |
H01L31/04;B24B27/06;H01L21/22 |
主分类号 |
H01L31/04 |
| 代理机构 |
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