VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR (TFET) MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a tunnel field-effect transistor having a heterostructure nanowire and a complementary tunnel field-effect transistor having an accumulated nanowire.

SOLUTION: The method includes a step for forming a stack 24 including a layer of a channel material 34 having a layer of a sacrificial material 21, a step for removing the material from the stack 24 to form at least one nanowire 30 from the layer of the channel material 34 and the layer of the sacrificial material 21, and a step for substituting the sacrificial material 21 in at least one nanowire 30 of a first dopant type with a first dopant type hetero-junction material 41, and then substituting the sacrificial material in at least one nanowire of a second dopant type with a second dopant type hetero-junction material 52, so as to easily manufacture a complementary TFET.

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