TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY EMPLOYING SAME

摘要

Disclosed is a tunnel magnetoresistance effect element that is capable, with a simple configuration suited to large volume applications, of achieving adequate thermal stability (E/kT) without increased power consumption, as well as a nonvolatile magnetic memory cell and a magnetic random access memory employing same. In a tunnel magnetoresistance effect element (400), a structure is connected in an array with a magnetoresistance effect detector unit (410) that includes a ferromagnetic recording layer (406); said structure having a field magnetization control layer (409), which denotes antiferromagnetism, which can be controlled by an electric field in a magnetism direction, and which is mutually coupled with a first ferromagnetic layer (408). An effective magnetic field is impressed upon the ferromagnetic recording layer (406) by the first ferromagnetic layer (408). The tunnel magnetoresistance effect element is applied to a magnetic memory cell and a magnetic random access memory.