METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide, and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing the SiC substrate on and in contact with a main surface of the base substrate; connecting the base substrate and the SiC substrate by heating the stacked substrate to allow the base substrate to have a temperature higher than that of the SiC substrate; and forming an epitaxial growth layer on an opposite main surface, to the SiC substrate, of the base substrate connected to the SiC substrate.