NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME
摘要
Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing same. The nanorod semiconductor device having a contact structure according to one embodiment of the present invention comprises: a transparent substrate; a transparent electrode layer formed on the transparent substrate; a nanorod layer including a plurality of semiconductor nanorods doped with a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with a second polarity and forming a certain physical contact with the terminal ends of the semiconductor nanorods.
申请公布号
WO2011078555(A3)
申请公布日期
2011.11.24
申请号
WO2010KR09158
申请日期
2010.12.21
申请人
DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION;LEE, SANG WUK;KANG, TAE WON;PANIN, GENNADY;CHO, HAK DONG
发明人
LEE, SANG WUK;KANG, TAE WON;PANIN, GENNADY;CHO, HAK DONG