发明名称 NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME
摘要 Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing same. The nanorod semiconductor device having a contact structure according to one embodiment of the present invention comprises: a transparent substrate; a transparent electrode layer formed on the transparent substrate; a nanorod layer including a plurality of semiconductor nanorods doped with a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with a second polarity and forming a certain physical contact with the terminal ends of the semiconductor nanorods.
申请公布号 WO2011078555(A3) 申请公布日期 2011.11.24
申请号 WO2010KR09158 申请日期 2010.12.21
申请人 DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION;LEE, SANG WUK;KANG, TAE WON;PANIN, GENNADY;CHO, HAK DONG 发明人 LEE, SANG WUK;KANG, TAE WON;PANIN, GENNADY;CHO, HAK DONG
分类号 B82B3/00;H01L31/0224 主分类号 B82B3/00
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