发明名称 |
Improved silicon thin film deposition for photovoltaic device applications |
摘要 |
The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi- junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as "value-added" products. |
申请公布号 |
AU2010234478(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
AU20100234478 |
申请日期 |
2010.04.07 |
申请人 |
ASAHI GLASS CO., LTD.;AGC FLAT GLASS NORTH AMERICA, INC. |
发明人 |
CORDING, CHRISTOPHER R.;SPENCER, MATTHEW;MASUMO, KUNIO |
分类号 |
H01L31/00;H01L31/18 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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