Fabrication process of semiconductor chips having longitudinal wire insertion notches

摘要

The method involves depositing a sacrificial film (26) on a wafer (20) e.g. silicon wafer, to leave a central part of each of a set of integrated devices (22) exposed and to cover an edge of the device at a level of which a groove is to be formed. A mold (28) is applied on the sacrificial film, and a hardenable liquid material (30) i.e. transparent epoxy resin, is injected into the mold, where the mold includes a cavity associated with each of a set of chips of a set of chip elements. The material is hardened, and the wafer is diced between the devices. The sacrificial film is eliminated.