发明名称 |
Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same |
摘要 |
A semiconductor device capable of reducing a thickness, an electronic product employing the same, and a method of fabricating the same are provided. The method of fabricating a semiconductor device includes preparing a semiconductor substrate having first and second active regions. A first transistor in the first active region includes a first gate pattern and first impurity regions. A second transistor the second active region includes a second gate pattern and second impurity regions. A first conductive pattern is on the first transistor, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern. The first conductive pattern may be formed on the first transistor while the second transistor is formed.
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申请公布号 |
US8063425(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20080232498 |
申请日期 |
2008.09.18 |
申请人 |
KIM DAE-IK;KIM YONG-IL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DAE-IK;KIM YONG-IL |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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