STRUCTURE OF SUPERLATTICE BANDGAP ENGINEERED CAPACITORLESS DRAM CELL TRANSISTOR

摘要

PURPOSE: An SBE EDRAM cell transistor which does not have a capacitor is provided to improve a charge holding characteristic by shutting a hole using band offset between a silicon germanium layer and a silicon layer. CONSTITUTION: A silicon dioxide obstacle(100) secludes that a hole which is created by impact ionization gets out. A pair of silicon source-drain layers(200) is formed in the upper end of the silicon dioxide obstacle. A silicon channel layer(300) is formed in order to be contiguous between a pair of silicon source-drain layers. A silicon germanium layer(400) is heterogeneously united in the bottom end of the silicon channel layer and stores the hole which is created by the impact ionization.