| 发明名称 |
GaN-based permeable base transistor and method of fabrication |
| 摘要 |
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same. |
| 申请公布号 |
USRE42955(E1) |
申请公布日期 |
2011.11.22 |
| 申请号 |
US20040268515 |
申请日期 |
2004.10.01 |
| 申请人 |
GUNTER LIBERTY L.;CHU KANIN;EDDY, JR. CHARLES R.;MOUSTAKAS THEODORE D.;BELLOTTI ENRICO;BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
GUNTER LIBERTY L.;CHU KANIN;EDDY, JR. CHARLES R.;MOUSTAKAS THEODORE D.;BELLOTTI ENRICO |
| 分类号 |
H01L21/302;H01L21/331;H01L21/461;H01L27/06;H01L29/20;H01L29/772 |
主分类号 |
H01L21/302 |
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