发明名称 Integrated circuit
摘要 According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element.
申请公布号 US8063394(B2) 申请公布日期 2011.11.22
申请号 US20080247763 申请日期 2008.10.08
申请人 ANDRES DIETER;BRUCHHAUS RAINER;GRUENING-VON SCHWERIN ULRIKE;KLOSTERMANN ULRICH;KREUPL FRANZ;KUND MICHAEL;MAJEWSKI PETRA;RUESTER CHRISTIAN;RUF BERNHARD;SYMANCZYK RALF;UFERT KLAUS-DIETER;QIMONDA AG 发明人 ANDRES DIETER;BRUCHHAUS RAINER;GRUENING-VON SCHWERIN ULRIKE;KLOSTERMANN ULRICH;KREUPL FRANZ;KUND MICHAEL;MAJEWSKI PETRA;RUESTER CHRISTIAN;RUF BERNHARD;SYMANCZYK RALF;UFERT KLAUS-DIETER
分类号 H01L29/02 主分类号 H01L29/02
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