摘要 |
Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel. |
申请人 |
APPLIED MATERIALS, INC.;YAP, LIPYEOW;NGUYEN, TUAN ANH (MIKE);DU BOIS, DALE R.;BALUJA, SANJEEV;NOWAK, THOMAS;ROCHA-ALVAREZ, JUAN CARLOS;ZHOU, JIANHUA |
发明人 |
YAP, LIPYEOW;NGUYEN, TUAN ANH (MIKE);DU BOIS, DALE R.;BALUJA, SANJEEV;NOWAK, THOMAS;ROCHA-ALVAREZ, JUAN CARLOS;ZHOU, JIANHUA |