MANUFACTURING METHOD OF DODECACALCIUM HEPTA-ALUMINATE ELECTRIDE AND DODECACALCIUM HEPTA-ALUMINATE ELECTRIDE MANUFACTURED BY THE METHOD

摘要

PURPOSE: A method for manufacturing dodecacalcium hepta-aluminate-based electride is provided to obtain the electride functioning as an n-type thermoelectric semiconductor based on aluminum tri-secbutoxide(Al(OC_4H_9)_3) as an aluminum source and calcium nitrate tetrahydrate(Ca(NO_3)_2·4H_2O) as a calcium source. CONSTITUTION: A method for manufacturing dodecacalcium hepta-aluminate-based electride includes the following: Aluminum tri-secbutoxide and ethylacetoacetotate or acetylacetone are mixed to obtain a chelated aluminum alkoxide solution. The chelated aluminum alkoxide solution is dissolved using a first organic solvent. Distilled water is added to implement a hydrolysis reaction, and an acidic solution is added to obtain a transparent alumina source solution. Calcium nitrate tetrahydrate is dissolved in a second organic solvent. Distilled water is added to obtain a CaO source solution. The alumina source solution is mixed with the CaO source solution. A high temperature material is immersed in the mixed solution to coat a thin film on the surface of the high temperature material. The coated high temperature material is thermally treated to obtain a 12CaO·7Al_2O_3 thin film. A carbothermal reduction treatment is implemented to the 12CaO·7Al_2O_3 thin film.