| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a double-gate transistor having an effect of achieving a low channel resistance and increasing an electron field-effect mobility, and a method for manufacturing the same. <P>SOLUTION: The semiconductor device according to the present invention comprises a lower gate electrode; an upper gate electrode on the lower gate electrode; a contact plug interposed between the lower gate electrode and the upper gate electrode and connecting the lower electrode to the upper electrode; and a functional electrode formed separately from the upper gate electrode with a height same as that of the upper gate electrode. According to the present invention, the double gate transistor having high electron field-effect mobility is applied to the semiconductor device, thereby characteristics of the semiconductor device can be improved. According to the present invention, especially, mass-production of the semiconductor device having large area and high image quality can be realized without increasing a process cost and decreasing yields, because it is not necessary to add any mask process and deposition process. <P>COPYRIGHT: (C)2012,JPO&INPIT |
