发明名称 |
SEMICONDUCTOR DEVICE HAVING A FIELD EFFECT SOURCE/DRAIN REGION |
摘要 |
A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device. |
申请公布号 |
US2011280066(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113192798 |
申请日期 |
2011.07.28 |
申请人 |
PARK KI-TAE;CHOI JUNG-DAL;ROH UK-JIN |
发明人 |
PARK KI-TAE;CHOI JUNG-DAL;ROH UK-JIN |
分类号 |
G11C11/34;H01L27/105 |
主分类号 |
G11C11/34 |
代理机构 |
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地址 |
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