| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the expansion of a guard ring, and to suppress short-circuit between mutual capacitor bottom electrodes caused by cylinder fall at a cell mat end, or to suppress high resistance caused by a reduced contact area to a bottom conductor on each base plane of the capacitor bottom electrodes. <P>SOLUTION: A semiconductor device manufacturing method includes a process of forming cylinder-shaped electrodes that become the capacitor bottom electrodes, and selectively removing a cylinder core insulating film that becomes the mold material of each cylinder-shaped electrode by wet etching after filling support films into the cylinder-shaped electrodes. The guard ring to impede the penetration of etchant to the outside of a capacitor formation area is provided on the outer circumference of the capacitor formation area. The support film having a seam is filled into the guard ring. The expansion of the guard ring is prevented either by forming a film to prevent contact between the seam and the etchant at the time of wet etching or by annealing the cylinder core insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
