MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To operate a transistor faster at higher speed.

SOLUTION: InGaAs is selectively etched by wet etching using phosphoric acid and hydrogen peroxide in aqueous solution to pattern an n-InGaAs layer 102 to form a source contact layer (a first semiconductor layer) 112, and a side part of a channel layer 114 is etched to form a channel layer 114a whose width is narrowed. By this wet etching, the channel layer 114a having desired mesa width (for example, 15 nm) is formed.

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