| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide laser annealing method, device and micro lens array, capable of configuring the micro lens array, having a large pitch different from a pitch of a planned transistor formation area on an amorphous silicon film, and capable of forming a fine polysilicon film area on the amorphous silicon film by laser annealing, with a pitch smaller than the array pitch of the micro lens array. <P>SOLUTION: Three columns of micro lenses in a first group 11, a second group 12 and a third group 13 are arrayed with an identical pitch P in each group. Between each group, the micro lenses are apart by P+(1/3)P. In a first processing step, a first-time laser light irradiation is carried out from the three rows of micro lenses in the first group. In a second processing step, a second-time laser light irradiation is carried out from micro lenses 5 of 2×3 rows at a time point when a substrate 20 is moved by the amount of 3P. Thereafter in the same manner, laser anneal areas are formed with a P/3 pitch. <P>COPYRIGHT: (C)2012,JPO&INPIT |
