| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses GIDL in a depletion layer formed between an impurity diffusion layer and a semiconductor substrate. <P>SOLUTION: The semiconductor device comprises: a second groove 32 which is formed by partially etching a surface 11a of a semiconductor substrate 11; a gate insulating filmi 38 covering at least a side face 32a of the second groove 32; a first conductive film 45 which is formed on the side face 32a of the second groove 32 via the gate insulating film 38, has an upper end surface 45a at a position below the surface 11a of the semiconductor substrate 11, and serves as a gate electrode 39; a second conductive film 46 which is formed on the first conductive film 45, and has an upper end 46 at a position above the upper end face 45b and below the surface 11a of the semiconductor substrate 11; and a second insulating film which is provided in the second groove 32 so as to cover the upper end surface 45b of the first conductive film 45 and the second conductive film 46 projecting from the upper end surface 45b of the first conductive film 45. <P>COPYRIGHT: (C)2012,JPO&INPIT |
