| 摘要 |
<p>PURPOSE: The contact hole OPC method of a semiconductor device is provided to improve OPC modeling accuracy by simply calculating the contraction bias of a contact hole. CONSTITUTION: The CD of a contact hole is measured(S40). A contact hole contraction process is advanced(S45). The CD of the contact hole is measured(S60). Contact hole contraction bias is measured at from the result of a second measurement process and a first measurement process(S70). OPC(Optical Proximity Correction) is advanced according to the contact hole contraction bias(S80).</p> |
