发明名称 Method for manufacturing a semiconductor structure
摘要 The present invention provides a method for manufacturing a semiconductor structure,—including—the following steps of: forming a substrate having a package array; forming a thermosetting non-conductive layer covering the substrate; partially solidifying the thermosetting non-conductive layer to form a semi-solid non-conductive layer; connecting chips to the package array on the substrate; pressing and heating the chips and the substrate so that the semi-solid non-conductive layer adheres with the chips and the substrate; pre-heating an encapsulant preformed on a metal layer; covering the chips on the substrate with the encapsulant; and solidifying the encapsulant to completely cover the chips on the substrate. The present invention can reduce use of gold to lower the manufacturing cost and can also improve the heat conduction efficiency of the semiconductor structure to enhance operational stability of the chips.
申请公布号 US8058109(B2) 申请公布日期 2011.11.15
申请号 US20100899530 申请日期 2010.10.06
申请人 SHEN GENG-SHIN;CHIPMOS TECHNOLOGIES INC. 发明人 SHEN GENG-SHIN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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