POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION

摘要

PURPOSE: A polishing solution for CMP is provided to achieve a high polishing speed for a silicon oxide film and to avoid the dependency on a silicon oxide film. CONSTITUTION: A polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. A polishing method for a substrate having a silicon oxide film on the surface comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.