发明名称 |
Integrated circuit and method of fabrication thereof |
摘要 |
A method of forming an integrated circuit structure comprising the steps of forming a first and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being different from the second width. |
申请公布号 |
US8058123(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20070946843 |
申请日期 |
2007.11.29 |
申请人 |
LIU JINPING;CONG HAI;ZHOU BINBIN;SEE ALEX K H;ZHOU MEI SHENG;HSIA LIANG CHOO;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
LIU JINPING;CONG HAI;ZHOU BINBIN;SEE ALEX K H;ZHOU MEI SHENG;HSIA LIANG CHOO |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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