发明名称 Integrated circuit and method of fabrication thereof
摘要 A method of forming an integrated circuit structure comprising the steps of forming a first and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being different from the second width.
申请公布号 US8058123(B2) 申请公布日期 2011.11.15
申请号 US20070946843 申请日期 2007.11.29
申请人 LIU JINPING;CONG HAI;ZHOU BINBIN;SEE ALEX K H;ZHOU MEI SHENG;HSIA LIANG CHOO;GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 LIU JINPING;CONG HAI;ZHOU BINBIN;SEE ALEX K H;ZHOU MEI SHENG;HSIA LIANG CHOO
分类号 H01L21/8238 主分类号 H01L21/8238
代理机构 代理人
主权项
地址