| 摘要 |
A memory is provided that includes a first memory level having a plurality of memory cells. Each memory cell includes a vertically oriented p-i-n diode including a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.
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