发明名称 |
Reducing read failure in a memory device |
摘要 |
Read failure is reduced by increasing the drain current through a serial string of memory cells during the read operation. In one embodiment, this is accomplished by using a higher read pass voltage for unselected word lines when the selected word line is within a predetermined distance of the drain side of the memory block array. If the selected word line is closer to the source side, a lower read pass voltage is used. In another embodiment, the cells on the word lines closer to the drain side of the memory block array are erased to a lower threshold voltage than the memory cells on the remaining word lines. |
申请公布号 |
US8059474(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20100706357 |
申请日期 |
2010.02.16 |
申请人 |
ARITOME SEIICHI;TORSI ALESSANDRO;MUSILLI CARLO;MICRON TECHNOLOGY, INC. |
发明人 |
ARITOME SEIICHI;TORSI ALESSANDRO;MUSILLI CARLO |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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