发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME |
摘要 |
A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.
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申请公布号 |
US2011275207(A1) |
申请公布日期 |
2011.11.10 |
申请号 |
US201113176196 |
申请日期 |
2011.07.05 |
申请人 |
MONIWA MASAHIRO;CHAKIHARA HIRAKU;OKUYAMA KOUSUKE;TAKAHASHI YASUHIKO |
发明人 |
MONIWA MASAHIRO;CHAKIHARA HIRAKU;OKUYAMA KOUSUKE;TAKAHASHI YASUHIKO |
分类号 |
H01L21/28;H01L27/088;G11C11/412;H01L21/8234;H01L21/8244;H01L27/11 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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