发明名称 RING CATHODE FOR USE IN MAGNETRON SPUTTERING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a magnetron sputtering device for use in the deposition of a film having a predictive thickness distribution with low defect levels. <P>SOLUTION: The position of a ring cathode is offset in relation to a center point of a planetary drive system. An anode 20 or reactive gas source 36 may be located within the inner radius of the ring cathode. Lower defect rates are obtained through the lower power density at a cathode 12 which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011225992(A) 申请公布日期 2011.11.10
申请号 JP20110088373 申请日期 2011.04.12
申请人 JDS UNIPHASE CORP 发明人
分类号 C23C14/34 主分类号 C23C14/34
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