发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To accomplish electrical connection of each semiconductor chip securely and reduce the manufacturing cost by simplifying the manufacturing process. <P>SOLUTION: A semiconductor device has a semiconductor chip of three or more stacked layers, a through electrode so disposed as to penetrate each semiconductor chip in the thickness direction, and a land. The land is so disposed as to surround the through electrode within each semiconductor chip and to be in contact with the semiconductor chip. A semiconductor device manufacturing method has a step of so forming a throughhole within each wafer as to penetrate each wafer in the thickness direction and to be surrounded by the land, and a step of forming the through electrode in the throughhole. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011228484(A) 申请公布日期 2011.11.10
申请号 JP20100097062 申请日期 2010.04.20
申请人 ELPIDA MEMORY INC 发明人
分类号 H01L25/065;H01L21/3205;H01L23/52;H01L25/07;H01L25/18 主分类号 H01L25/065
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