NANO-WIRES MADE OF NOVEL PRECURSORS AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to nano-wires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nano-wires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si-Si and/or Ge-Si and/or Ge-Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.