| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a glass substrate for a semiconductor device through-electrode, which suppresses warping or deformation although having a coating film. <P>SOLUTION: The present invention relates to a glass substrate for a semiconductor device through-electrode, having a through-hole extending from a first surface to a second surface. The glass substrate has a thickness ranging from 0.005 to 1 mm and an average thermal expansion coefficient at 50 to 350°C ranging from 10×10<SP POS="POST">-7</SP>/K to 100×10<SP POS="POST">-7</SP>/K, and the number density of the through-hole ranges from 0.1/mm<SP POS="POST">2</SP>to 10,000/mm<SP POS="POST">2</SP>. On the first surface and the second surface, a first silica film and a second silica film are installed, and both a thickness t1 of the first silica film and a thickness t2 of the second silica film range from 0.2 to 10 μm, respectively. When a ratio Δt of the difference between the thickness t1 of the first silica film and the thickness t2 of the second silica film is denoted as Δt(%)=(t1-t2)/t1×100, Δt is ±20% or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
